Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: IGBT Discrete, Toshiba IGBT discrete components and modules, Toshiba insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.90901+$37.627210+$35.4683100+$33.8645250+$33.6178500+$33.37101000+$33.09352500+$32.84675000+$32.6925 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 50A 40000mW 3Pin(3+Tab) TO-3PFM Tube13085+$28.087050+$26.8867200+$26.2146500+$26.04651000+$25.87852500+$25.68645000+$25.56647500+$25.4464 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 39A 200000mW 3Pin(3+Tab) TO-3PN7229 -
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Category: IGBTtransistorDescription: Igbt 1200V 50A 312W To3pn76985+$14.751450+$14.1210200+$13.7679500+$13.67971000+$13.59142500+$13.49065000+$13.42757500+$13.3645 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 42A 170000mW 3Pin(3+Tab) TO-3PN443410+$11.4456100+$10.8733500+$10.49181000+$10.47272000+$10.39645000+$10.30107500+$10.224710000+$10.1866 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 50A 200000mW 3Pin(3+Tab) TO-3PL19621+$66.686210+$63.7868100+$63.2649250+$62.8590500+$62.22111000+$61.93122500+$61.52535000+$61.1773 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 90A 55000mW 3Pin(3+Tab) TO-3PFM Tube53621+$71.961310+$68.8325100+$68.2693250+$67.8313500+$67.14301000+$66.83012500+$66.39215000+$66.0166 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 900V 60A 200000mW 3Pin(3+Tab) TO-3P(LH)28865+$16.681950+$15.9690200+$15.5697500+$15.46991000+$15.37012500+$15.25615000+$15.18487500+$15.1135 -
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Category: IGBTtransistorDescription: Igbt 1200V 40A 223W To3pn63435+$13.550950+$12.9718200+$12.6475500+$12.56651000+$12.48542500+$12.39275000+$12.33487500+$12.2769 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.44051+$37.724810+$35.5603100+$33.9524250+$33.7050500+$33.45761000+$33.17932500+$32.93195000+$32.7773 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 45A 40000mW 3Pin(3+Tab) TO-3PFM Tube4911 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 45A 40000mW 3Pin(3+Tab) TO-3PFM Tube9328 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 60A 41200mW 3Pin(3+Tab) TO-3PFM Tube1874 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 25A 200000mW 3Pin(3+Tab) TO-3PL3645 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 24A 180000mW 3Pin(3+Tab) TO-3P Rail80181+$50.874010+$47.9550100+$45.7866250+$45.4530500+$45.11941000+$44.74412500+$44.41055000+$44.2020
